发明名称 |
SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K MATERIALS AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species. |
申请公布号 |
US2015206805(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
US201514669968 |
申请日期 |
2015.03.26 |
申请人 |
SK hynix Inc. |
发明人 |
LEE Seung-Mi;JI Yun-Hyuck |
分类号 |
H01L21/8238;H01L21/3215;H01L21/3213 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Gyeonggi-do KR |