| 摘要 |
PROBLEM TO BE SOLVED: To improve the aperture ratio of a semiconductor device.SOLUTION: A semiconductor device includes a pixel portion having a first thin-film transistor and a drive circuit having a second thin-film transistor on the same substrate. The thin-film transistor in the pixel portion has: a gate electrode layer, a gate insulation layer, an oxide semiconductor layer having a region where film thickness is thin in the periphery thereof; an oxide insulation layer in contact with a part of the oxide semiconductor layer; a source electrode layer and a drain electrode layer; and a pixel electrode layer. The gate electrode layer, the gate insulation layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the oxide insulation layer and the pixel electrode layer of the first thin-film transistor are translucent. A source electrode layer and a drain electrode layer of the thin-film transistor in the drive circuit are covered by a protective insulation layer, and composed of a conductive material having lower resistance than that of the source electrode layer and the drain electrode layer of the pixel portion. |
