| 发明名称 |
NANOWIRE SIZED OPTO-ELECTRONIC STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure. |
| 申请公布号 |
US2015207037(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414572123 |
申请日期 |
2014.12.16 |
| 申请人 |
GLO AB |
发明人 |
Lowgren Truls;Hasnain Ghulam |
| 分类号 |
H01L33/40;H01L33/20;H01L33/60 |
主分类号 |
H01L33/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An opto-electric structure, comprising:
a plurality of nano elements arranged side by side on a support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction; a first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor; and a mirror provided on a second conductivity type semiconductor side of the structure. |
| 地址 |
Lund SE |
