发明名称 TOROID INDUCTOR IN REDISTRIBUTION LAYERS (RDL) OF AN INTEGRATED DEVICE
摘要 Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, a first metal redistribution layer coupled to one of the metal layers, and a second metal redistribution layer coupled to the first metal redistribution layer. The first and second metal redistribution layers are configured to operate as a toroid inductor in the integrated device. In some implementations, the integrated device also includes a third metal redistribution layer. The third metal redistribution layer is coupled to the first and second metal redistribution layers. The third metal redistribution layer is a via. In some implementations, the first, second, and third metal redistribution layers are configured to operate as a toroid inductor in the integrated device. In some implementations, the first, second, and third redistribution layers form a set of windings for the toroid inductor.
申请公布号 US2015206837(A1) 申请公布日期 2015.07.23
申请号 US201414160448 申请日期 2014.01.21
申请人 QUALCOMM Incorporated 发明人 Gu Shiqun;Lane Ryan David;Ray Urmi
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
代理机构 代理人
主权项 1. An integrated device comprising: a substrate; a plurality of metal layers coupled to the substrate; a plurality of dielectric layers coupled to the substrate; and a redistribution portion coupled to one of the metal layers, the redistribution portion comprising: a first metal redistribution layer; anda second metal redistribution layer coupled to the first metal redistribution layer, wherein the first and second metal redistribution layers are configured to operate as a toroid inductor in the integrated device.
地址 San Diego CA US