SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a base dielectric layer, a semiconductor substrate layer disposed on the base dielectric layer, and a transistor disposed in the semiconductor substrate layer. The transistor includes a gate dielectric layer disposed on the semiconductor substrate layer, a gate electrode disposed on the gate dielectric layer, source and drain electrodes disposed within the semiconductor substrate layer on opposite sides of the gate electrode, an undoped channel region, a base dopant region, and a threshold voltage setting region. The undoped channel region, base dopant region, and threshold voltage setting region are disposed within the semiconductor substrate layer. The undoped channel region is disposed between the source electrode and the drain electrode, and the base dopant region and the threshold voltage setting region extend beneath the source electrode and the drain electrode. The threshold voltage setting region is disposed between the undoped channel region and the base dopant region.

主权项

1. A semiconductor device comprising:
a base dielectric layer; a semiconductor substrate layer disposed on the base dielectric layer; and a transistor disposed within and on a surface of the semiconductor substrate layer, wherein the transistor comprises:
a gate dielectric layer disposed on the semiconductor substrate layer;a gate electrode disposed on the gate dielectric layer;a source electrode and a drain electrode disposed within the semiconductor substrate layer on opposite sides of the gate electrode; andan undoped channel region, a base dopant region, and a threshold voltage setting region, wherein the undoped channel region, the base dopant region, and the threshold voltage setting region are disposed within the semiconductor substrate layer, andwherein the undoped channel region is disposed between the source electrode and the drain electrode, and the base dopant region and the threshold voltage setting region extend beneath the source electrode and the drain electrode,the undoped channel region is disposed beneath the gate electrode, the base dopant region is disposed below the undoped channel region, and the threshold voltage setting region is disposed between the undoped channel region and the base dopant region.