发明名称 FAST PROGRAMMING ANTIFUSE AND METHOD OF MANUFACTURE
摘要 The embodiments described herein provide an antifuse that includes a substrate material and an isolation trench formed in the substrate material, where the isolation trench has a first side and a second side opposite the first side. An electrode is positioned above the substrate material and proximate to the first side of the isolation trench. An insulating layer is disposed between the electrode and the substrate material. So configured, a voltage or current applied between the electrode and the substrate material causes a rupture in the insulating layer and creates a current path through the insulating layer and under the isolation trench to the substrate material proximate the second side of the isolation trench.
申请公布号 US2015206892(A1) 申请公布日期 2015.07.23
申请号 US201414159617 申请日期 2014.01.21
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MIN Won Gi;ZUO Jiang-Kai
分类号 H01L27/112 主分类号 H01L27/112
代理机构 代理人
主权项 1. An antifuse element comprising: a substrate material; an isolation trench formed in the substrate material, the isolation trench having a first side and a second side opposite the first side; an electrode positioned above the substrate material and having at least a portion proximate to the first side of the isolation trench; and an insulating layer disposed between the electrode and the substrate material such that voltage of a threshold applied between the electrode and the substrate material causes a rupture in the insulating layer and creates a current path from the electrode through the insulating layer and under the isolation trench to the substrate material proximate the second side of the isolation trench.
地址 Austin TX US