| 摘要 |
A method for manufacturing a display panel having a thin film transistor matrix with a lightly doped drain structure, comprising: firstly forming a semiconductor pattern (12) with a predetermined shape on a substrate (10); forming a dielectric layer (13) covering the semiconductor pattern (12) on the substrate (10); forming a metal layer (14) on the dielectric layer (13); forming a photoresistance pattern (15), the size of which is smaller than that of the semiconductor pattern (12), right above the semiconductor pattern (12) on the metal layer (14); etching the metal layer (14) to form a gate (14a), the size of which is smaller than that of the photoresistance pattern (15); using the photoresistance pattern (15) as a mask film to perform high-concentration ion doping on a part that is not covered by the photoresistance pattern (15) so as to form a heavily doped region (12a); removing the photoresistance pattern (15); and using the gate (14a) as a mask film to perform low-concentration ion doping between the heavily doped region (12a) and a region of the semiconductor pattern (12) covered by the gate (14a) to form a lightly doped region (12b). |
