| 摘要 |
<p>A light emitting device according to an embodiment comprises a light emitting structure including a first semiconductor layer doped with an n type dopant, a second semiconductor layer doped with a p type dopant, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a reflective electrode layer contacting with the second semiconductor layer, wherein the reflective electrode layer comprises a first layer and a second layer contacting with one surface of the second semiconductor layer, and a middle layer located between the first layer and the second layer. The first layer and the second layer includes at least one among Ag, Ag alloy, Al, and Al alloy, and the middle layer includes at least one among Ni, Ti, Pt, Si, and metal oxide.</p> |
