发明名称 ガス処理方法、ガス処理装置、微粉末の形成方法及び微粉末形成装置
摘要 <P>PROBLEM TO BE SOLVED: To remove a hydride of silicon from gas containing the hydride of silicon in a simpler manner than conventional ones while suppressing increase in costs. <P>SOLUTION: A gas treatment method removes the hydride of silicon from gas containing the hydride of silicon. The gas treatment method is adopted, which is characterized in that bubbles having a diameter of 10 &mu;m or less and comprising the gas containing the hydride of silicon are brought into contact with water. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5750337(B2) 申请公布日期 2015.07.22
申请号 JP20110177432 申请日期 2011.08.15
申请人 大陽日酸株式会社 发明人 筑根 敦弘;石原 良夫
分类号 B01D53/14;B01D53/18;B01D53/46;B01D53/78 主分类号 B01D53/14
代理机构 代理人
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