| 发明名称 | Vertical devices and methods of forming | ||
| 摘要 | Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch. | ||
| 申请公布号 | US9087895(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201314021445 | 申请日期 | 2013.09.09 |
| 申请人 | Micron Technology, Inc. | 发明人 | Filippini Andrea;Ferrario Luca;Mariani Marcello |
| 分类号 | H01L21/336;H01L21/28;H01L29/06;H01L29/78;H01L21/311;H01L29/66;H01L27/102;H01L27/108 | 主分类号 | H01L21/336 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A method of forming a device, comprising: forming a first insulator material in a trench; forming a dielectric material in the trench over the first insulator material; modifying the dielectric material into a second insulator material having an etch rate equal to or greater than an etch rate of the first insulator material; and removing a portion of the first insulator material and a portion of the second insulator material to expose a portion of a sidewall of the trench. | ||
| 地址 | Boise ID US | ||