发明名称 |
Electric potential control of high voltage insulation |
摘要 |
A high voltage device includes a circuit board 12 surrounded by an enclosure 11, potting 13 to provide electrical insulation between the circuit board 12 and the enclosure 11, and a layer of material 14, having a different resistivity than a resistivity of the potting 13, dividing the potting into separate and discrete sections. The layer of material 14 can be multiple layers. Each layer 14 can have a voltage applied, and a voltage of any layer 14 closer to the circuit board 12 can have a higher absolute value than any layer 14 farther from the circuit board 12. |
申请公布号 |
US9087670(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201213625705 |
申请日期 |
2012.09.24 |
申请人 |
Motek, Inc. |
发明人 |
Wang Dongbing |
分类号 |
H05G1/10;H01J35/02;H05K1/02 |
主分类号 |
H05G1/10 |
代理机构 |
Thorpe North & Western, LLC |
代理人 |
Thorpe North & Western, LLC |
主权项 |
1. A power source device for an x-ray tube, comprising:
a. a circuit board substantially surrounded by an enclosure; b. a high voltage component on the circuit board configured to have a higher voltage differential between this component and the enclosure than other components on the circuit board; c. a circuit on the circuit board configured to create a voltage differential between the high voltage component and the enclosure of at least 9 kilovolts; d. an electrically insulative potting material disposed between the circuit board and the enclosure; e. a layer of electrically conductive material disposed within the potting material and disposed at least partially between the circuit board and the enclosure; f. the layer of electrically conductive material dividing at least a portion of the potting into separate and discrete sections, the separate and discrete sections of potting having a higher dielectric strength than if the sections of potting were not divided by the layer of electrically conductive material; g. the separate and discrete sections of potting providing electrical insulation between the high voltage component and the enclosure; and h. the layer of electrically conductive material is configured to have a voltage applied that is between a voltage of the high voltage component and a voltage of the enclosure. |
地址 |
Orem UT US |