| 发明名称 | Semiconductor memory device | ||
| 摘要 | A semiconductor memory device includes a plurality of memory banks in a first region, a data terminal to which an input data signal is input, the data terminal being in a second region, and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks. | ||
| 申请公布号 | US9087592(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201313775935 | 申请日期 | 2013.02.25 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Sohn Kyo-min |
| 分类号 | G11C11/00;G11C11/16;G11C7/10;G11C11/408;G11C11/4096;G11C11/4097 | 主分类号 | G11C11/00 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor memory device, comprising: a plurality of memory banks in a first region; a data terminal to which an input data signal, as data to be written to the plurality of memory banks, is input, the data terminal being in a second region; and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||