发明名称 |
Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof |
摘要 |
A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element. |
申请公布号 |
US9087633(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201113334045 |
申请日期 |
2011.12.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Khvalkovskiy Alexey Vasilyevitch;Nikitin Vladimir;Apalkov Dmytro;Krounbi Mohamad Towfik |
分类号 |
H01F10/32;H01L43/10;H01L43/08;G11C11/16 |
主分类号 |
H01F10/32 |
代理机构 |
Renaissance IP Law Group LLP |
代理人 |
Renaissance IP Law Group LLP |
主权项 |
1. A magnetic device, comprising:
a magnetic multilayer structure having one or more free layers and one or more reference layers, said one or more free layers and said one or more reference layers each having a magnetization direction that is substantially perpendicular to its plane; a contact structure electrically coupled to the magnetic multilayer structure, the contact structure having a magnetic material therein configured to exert a magnetic field on the one or more free layers of the magnetic multilayer structure, said magnetic material having a substantially perpendicular magnetic anisotropy (PMA). |
地址 |
KR |