| 摘要 |
FIELD: electricity.SUBSTANCE: in a method for manufacturing a microwave integrated circuit, including manufacturing of a dielectric substrate of diamond with the thickness of 100-200 mcm, application of a metallised coating, formation of active and passive elements, elements of transmission lines, outputs, grounding elements, a layer of crystalline semi-insulating silicon is prefabricated with the thickness of 350-500 mcm and its face is treated up to a roughness of at least of 14class and the dielectric diamond substrate is made at the face of the crystalline semi-insulating silicon layer, then the layer of crystalline semi-insulating silicon is thinned at the reverse side and active and passive elements, elements of transmission lines, outputs are formed at the reverse side of the crystalline semi-insulating silicon layer; in the dielectric diamond substrate and crystalline semi-insulating silicon layer from the side of the dielectric diamond substrate feedthrough holes are made with a grounding pattern and then the metallised coating is applied to the dielectric diamond substrate and walls of the above feedthrough holes.EFFECT: improved electrical performance of the integrated circuit at improved reliability, reproducibility, reduced labour intensity of manufacturing and reduced weight and dimensions.3 cl, 1 dwg, 1 tbl |
