| 摘要 |
<p>The circuit (1) has a semiconductor substrate (4), and a set of layers (3) forming an electronic circuit. The substrate includes a hole (7) that is open on one rear face (6) opposed to the set of layers. A depth (P) is provided at 50% thickness (e) of the integrated circuit, where the depth of the hole lies between 20 and 120 micrometers, i.e. preferably between 40 and 100 micrometers. The hole presents a wall that forms an angle that ranges between 60 and 90 degrees with regard to the face opposed to the set of layers. An independent claim is also included for a method for manufacturing an integrated circuit.</p> |
