| 摘要 |
<p>An embodiment of the present invention includes a substrate, a buffer layer arranged on the substrate, dislocation preventing particles arranged on the buffer layer, and a light emitting structure which includes a first conductivity type semiconductor layer which is arranged on the buffer layer, an active layer arranged on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer arranged on the active layer. The dislocation preventing particles are formed with a single layer on the surface of the buffer layer. The transfer or transmission of dislocations existing on the buffer layer to the light emitting structure can be prevented.</p> |
