JUNCTION FIELD EFFECT TRANSISTOR

摘要

In a high voltage JFET, a p-floating region is provided in the surface layer of an n-drift region, thereby increasing the resistance R of the n-drift region and minimizing the voltage divided at a pn junction. This makes it possible to improve ESD capacity without increasing device size and without making the cutoff current smaller.

主权项

1. A junction field effect transistor, comprising:
a second conductivity type drain region formed in a surface of a first conductivity type semiconductor region; a second conductivity type drift region contacting said drain region and formed in the surface of the semiconductor region; a second conductivity type source region contacting said drift region and formed in the surface of the semiconductor region separated from the drain region; an interlayer insulating film formed on the semiconductor region; and a first conductivity type floating region formed in a surface of the drift region separated from the source region, said floating region being electrically floating.