| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a high aperture ratio.SOLUTION: A semiconductor device includes first wiring on an insulation surface, a first insulating film on the first wiring, a semiconductor film on the first insulating film, a second insulating film on the semiconductor film, second wiring on the second insulating film, a gate electrode connected to the first wiring, a third insulating film on the second wiring and gate electrode, and third wiring connected to the semiconductor film on the third insulating film. |
