发明名称 |
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATING APPARATUS |
摘要 |
A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time. |
申请公布号 |
US2015200108(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
US201314417698 |
申请日期 |
2013.06.07 |
申请人 |
SCREEN Holdings Co., Ltd. |
发明人 |
Kiyama Hiroki |
分类号 |
H01L21/311;H01L21/67;H01L21/225;H01L21/02 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate treatment method for forming a dopant-containing thin film on a surface of a substrate, the method supplying, without hydrogen-termination to a surface of a substrate, from which an oxide film is removed, a dopant solution to the surface of said substrate to form a dopant-containing thin film. |
地址 |
Kyoto JP |