发明名称 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATING APPARATUS
摘要 A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time.
申请公布号 US2015200108(A1) 申请公布日期 2015.07.16
申请号 US201314417698 申请日期 2013.06.07
申请人 SCREEN Holdings Co., Ltd. 发明人 Kiyama Hiroki
分类号 H01L21/311;H01L21/67;H01L21/225;H01L21/02 主分类号 H01L21/311
代理机构 代理人
主权项 1. A substrate treatment method for forming a dopant-containing thin film on a surface of a substrate, the method supplying, without hydrogen-termination to a surface of a substrate, from which an oxide film is removed, a dopant solution to the surface of said substrate to form a dopant-containing thin film.
地址 Kyoto JP