SUBSTRATE PROCESSING APPARATUS

摘要

A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.

主权项

1. A substrate processing apparatus which performs a plasma process on a substrate, with the substrate being disposed in a processing chamber and a focus ring being disposed to surround the substrate, the substrate processing apparatus comprising:
a substrate holding unit which is provided on a susceptor and includes a first portion having a substrate holding surface and a second portion having a focus ring holding surface, wherein the first portion is provided to protrude upwardly from the second portion at an upper middle portion of the substrate holding unit and electrostatically adsorbs a rear surface of the substrate to the substrate holding surface, wherein the second portion electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface, and wherein a diameter of the substrate holding surface is smaller than a diameter of the substrate, a side surface of the substrate, a rear surface of the substrate protruded from the substrate holding surface and a side surface of the first portion are separated from a side surface of the focus ring, respectively, and a third portion having a predetermined surface roughness is provided on the focus ring holding surface along a circumferential direction of the focus ring; a susceptor temperature control mechanism which adjusts a temperature of the susceptor; and a heat transfer gas supplying mechanism which independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring, wherein the heat transfer gas supplying mechanism independently provides a first gas passage connected to the first heat transfer gas supply unit and a second gas passage connected to the second heat transfer gas supply unit, a plurality of first gas holes which are provided in the substrate holding surface, the first gas passage communicates with the first gas holes, and the second gas passage communicated with the third portion having the surface roughness which is rough enough such that the second heat transfer gas is communicated to the focus ring holding surface.