| 发明名称 |
Semiconductor Devices and Methods of Manufacture Thereof |
| 摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device comprises a workpiece including a conductive feature disposed in a first insulating material and a second insulating material disposed over the first insulating material, the second insulating material having an opening over the conductive feature. A graphene-based conductive layer is disposed over an exposed top surface of the conductive feature within the opening in the second insulating material. A carbon-based adhesive layer is disposed over sidewalls of the opening in the second insulating material. A carbon nano-tube (CNT) is disposed within the patterned second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer. |
| 申请公布号 |
US2015200164(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201514668207 |
申请日期 |
2015.03.25 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yang Shin-Yi;Lee Ming-Han;Lee Hsiang-Huan;Wu Hsien-Chang |
| 分类号 |
H01L23/532;H01L23/528;H01L23/522 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a workpiece including a conductive feature disposed in a first insulating material and a second insulating material disposed over the first insulating material, the second insulating material having an opening over the conductive feature; a graphene-based conductive layer disposed over an exposed top surface of the conductive feature within the opening in the second insulating material; a carbon-based adhesive layer disposed over sidewalls of the opening in the second insulating material; and a carbon nano-tube (CNT) disposed within the second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer. |
| 地址 |
Hsin-Chu TW |
