自旋电子逻辑元件;SPINTRONIC LOGIC ELEMENT

摘要

实施例包含实施成为自旋逻辑装置之C元件逻辑闸，藉由以自旋电子技术来实施C元件，提供非同步逻辑之轻巧及低功率实施。实施例包含：第一奈米柱，包括第一接点及第一固定磁层；第二奈米柱，包含第二接点及第二固定磁层；以及，第三奈米柱，包含第三接点、穿隧障壁、及第三固定磁层；其中，(a)第一、第二、及第三奈米柱都形成于自由磁层上，以及(b)第三固定磁层、穿隧障壁、及自由磁层形成磁穿隧接面(MTJ)。此处揭示其它实施例。; a second nanopillar including a second contact and a second fixed magnetic layer; and a third nanopillar including a third contact, a tunnel barrier, and a third fixed magnetic layer; wherein (a) the first, second, and third nanopillars are all formed over a free magnetic layer, and (b) the third fixed magnetic layer, the tunnel barrier, and the free magnetic layer form a magnetic tunnel junction (MTJ). Other embodiments are described herein.