SEMICONDUCTOR DEVICE AND FORMATION THEREOF

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a doped region, in some embodiments. The semiconductor device includes a gate over a channel portion of the fin. The gate including a gate electrode over a gate dielectric between a first sidewall spacer and a second sidewall spacer. The first sidewall spacer includes an initial first sidewall spacer over a first portion of a dielectric material. The second sidewall spacer includes an initial second sidewall spacer over a second portion of the dielectric material.

主权项

1. A semiconductor device comprising:
a fin comprising a doped region; a gate over a channel portion of the fin, the gate comprising a gate electrode over a gate dielectric between a first sidewall spacer and a second sidewall spacer; the first sidewall spacer comprising:
an initial first sidewall spacer over a first portion of a dielectric material, the dielectric material comprising at least one of silicon nitride, aluminum oxide or silicon oxy nitride; and the second sidewall spacer comprising:
an initial second sidewall spacer over a second portion of the dielectric material.