发明名称 WAFER LEVEL PACKAGE WITH REDISTRIBUTION LAYER FORMED WITH METALLIC POWDER
摘要 A semiconductor device is assembled where a signal redistribution layer is formed over a partially encapsulated semiconductor die. The distribution layer is formed by selectively coating a first electrical insulating layer over an active surface of the die and a surrounding portion of the encapsulation material, where die bonding pads on the active surface of the die are exposed through access apertures in the first electrical insulating layer. A layer of metallic powder is deposited onto the first insulating layer and then electrically conductive runners are formed from the layer of metallic powder. The runners are coated with a further electrical insulating layer. A mounting area of each runner is exposed through an external connection aperture. Solder balls may be attached to the mounting areas.
申请公布号 US2015200177(A1) 申请公布日期 2015.07.16
申请号 US201414151833 申请日期 2014.01.10
申请人 FOONG CHEE SENG;Tan Lan Chu 发明人 FOONG CHEE SENG;Tan Lan Chu
分类号 H01L23/00;H01L23/498 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of assembling a semiconductor device, the method comprising: providing a partially formed package including a semiconductor die and an encapsulating region, wherein a support surface of the partially formed package includes an active surface of the die and an adjacent surface of the encapsulating region; selectively coating the support surface with a first electrical insulating layer so that bonding pads on the active surface of the die are exposed through access apertures in the first electrical insulating layer; depositing a layer of metallic powder onto the first electrical insulating layer, wherein the powder fills the access apertures; forming electrically conductive runners from the layer of metallic powder, the runners being selectively connected to the die bonding pads through the access apertures; removing regions of the layer of metallic powder that do not form the runners; and selectively coating the runners with a further electrical insulating layer so that a mounting area of each runner is exposed through an external connection aperture in the further electrical insulating layer, thereby forming the semiconductor device.
地址 Sg. Buloh MY
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