FINFET AND METHOD FOR MANUFACTURING THE SAME

摘要

A FinFET with reduced leakage between source and drain regions, and a method for manufacturing the FinFET are disclosed. In one aspect, the method includes forming, on a semiconductor substrate, at least two openings to define a semiconductor fin. The method also includes forming a gate dielectric layer that conformally covers the fin and the openings. The method also includes forming, within the openings, a first gate conductor adjacent to the bottom of the fin. The method also includes forming, within the openings, an insulating isolation layer on the first gate conductor. The method also includes forming a second gate conductor on the fin and on the insulating isolation layer adjacent to the top of the fin. The method also includes forming spacers on sidewalls of the second gate conductor. The method also includes forming a source region and a drain region in the fin.

主权项

1. A method of manufacturing a FinFET, comprising:
forming, on a semiconductor substrate, a plurality of openings to define a semiconductor fin; forming a first gate dielectric layer that conformally covers the semiconductor fin and the openings; forming within the openings a first gate conductor adjacent to a bottom of the semiconductor fin; forming within the openings an insulating isolation layer arranged on the first gate conductor; forming a second gate conductor having a first portion on the insulating isolation layer, the first portion adjacent to a top of the semiconductor fin, the second gate conductor having a second portion on the semiconductor fin; forming spacers on sidewalls of the second gate conductor; and forming a source region and a drain region in the semiconductor fin.