Multiple-Patterning Photolithographic Mask and Method

摘要

A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.

主权项

1. A method of forming a semiconductor device, the method comprising:
exposing a region of a substrate to radiation in a first lithographic procedure using a mask in a first alignment; thereafter realigning the substrate relative to the mask according to a spiral movement pattern into a second alignment; and exposing the region of the substrate to radiation in a second lithographic procedure using the mask in the second alignment, wherein at least a portion of the region is exposed to radiation in both the first lithographic procedure and the second lithographic procedure.