Method of Manufacturing Semiconductor Device and Semiconductor Device

摘要

Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming a silicon nitride film above a surface of a semiconductor substrate; (b) forming a first wiring above the silicon nitride film; (c) forming a second wiring containing aluminum over the first wiring via a first insulating film; (d) forming a second insulating film over the second wiring; (e) forming an opening that exposes a part of the second wiring by removing the second insulating film over the second wiring; and (f) after the (e) step, forming aluminum nitride on a surface of the exposed second wiring, wherein in the (a) step, the silicon nitride film is formed also on aback surface of the semiconductor substrate.