发明名称 DEVICE FOR GROWING MONOCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING THE SAME
摘要 One embodiment comprises: a crucible for holding a silicon melt; a heat shield for surrounding monocrystalline silicon which is grown from the silicon melt; a thermal image capturing portion for capturing a shoulder, which is grown by means of a shouldering process, and obtaining thermal image data as a result of the image capturing; and a control portion for calculating the weight of the shoulder by using the thermal image data, and controlling the raising or lowering the crucible on the basis of the weight of the shoulder that is calculated.
申请公布号 US2015197874(A1) 申请公布日期 2015.07.16
申请号 US201314411365 申请日期 2013.07.08
申请人 LG SILTRON INCORPORATED 发明人 Kang Jong Min;Ha Se Geun
分类号 C30B15/26;C30B29/06 主分类号 C30B15/26
代理机构 代理人
主权项 1. A device of growing monocrystalline silicon, the device comprising: a crucible configured to receive a silicon melt; a heat shield configured to surround monocrystalline silicon grown from the silicon melt; an image capture unit configured to capture an image of a shoulder grown by a shouldering process and to acquire image data based on the captured result; and a controller configured to calculate a weight of the shoulder using the image data and to regulate rising and lowering of the crucible based on the calculated weight of the shoulder.
地址 Gumi-si, Gyeongsangbuk-do KR