| 摘要 |
This semiconductor device is provided with a first diffusion section (22), a second diffusion section (21), a channel section (23), a gate section (24), and a stress applying section (31 and/or 32 and/or 33). In a semiconductor layer (10) having a trench section (10A), the first diffusion section (22) is formed at a bottom portion of the trench section (10A) or close to the bottom portion, the second diffusion section (21) is formed at an upper end portion of the trench section (10A), and the channel section (23) is formed between the first diffusion section (22) and the second diffusion section (21). The gate section (24) is embedded at a position inside of the trench section (10A), said position facing the channel section (23). The stress applying section (31 and/or 32 and/or 33) applies to the channel section (23) compressive stress or tensile stress in the normal line direction of the semiconductor layer (10). |
