半导体装置;SEMICONDUCTOR DEVICE

摘要

半导体装置，包含一基板、一第一井区(well)及一第二井区，形成在基板之中。第一井区具有一第一导电类型(conductivity type)。第二井区具有不同于第一导电类型之一第二导电类型。半导体装置包含具有第一导电类型之一第一重掺杂区(heavily-doped region)，及具有第一导电类型之一第二重掺杂区。第一重掺杂区的一部分形成在第一井区之中。第二重掺杂区形成在第二井区之中。此装置更包含一绝缘层，绝缘层形成在第一重掺杂区与第二重掺杂区之间之基板之一通道区之上方。此装置更包含一闸极电极，形成在绝缘层之上方。此装置更包含一端点，用以耦接至欲保护之一外部电路。此装置更包含一切换电路，耦接在端点与第一重掺杂区之间，以及在端点与闸极电极之间。;A semiconductor device includes a substrate, and first and second wells formed in the substrate.The first well has a first conductivity type.The second well has a second conductivity type different than the first conductivity type.The device includes a first heavily-doped region having the first conductivity type and a second heavily-doped region having the first conductivity type.A portion of the first heavilydoped region is formed in the first well.The second heavily-doped region is formed in the second well.The device also includes an insulating layer formed over a channel region of the substrate between the first and second heavily-doped regions, and a gate electrode formed over the insulating layer.The device further includes a terminal for coupling to a circuit being protected, and a switching circuit coupled between the terminal and the first heavily-doped region, and between the terminal and the gate electrode.