半导体装置;SEMICONDUCTOR DEVICE

摘要

本发明的课题是在于使半导体装置的特性提升。其解决手段是以能够具有沟(T)、闸极电极(GE)、源极电极(SE)及汲极电极(DE)的方式构成半导体装置，该沟(T)是贯通形成于基板(S)的上方的电位固定层(VC)、通道底层(UC)、通道层(CH)及障壁层(BA)之中的障壁层(BA)，且到达至通道层(CH)的途中，该闸极电极(GE)是在此沟(T)内隔着闸极绝缘膜(GI)来配置，该源极电极(SE)及汲极电极(DE)是分别形成于闸极电极(GE)的两侧的障壁层(BA)的上方。而且，藉由到达至电位固定层(VC)的贯通孔(TH)的内部的连接部(VIA)来电性连接电位固定层(VC)与源极电极(SE)。藉此，可减低临界值电位或(ON)电阻等的特性的变动。;A semiconductor device includes a potential fixing layer, a channel underlayer, a channel layer, and a barrier layer formed above a substrate, a trench that penetrates the barrier layer and reaches as far as a middle of the channel layer, a gate electrode disposed by way of an insulation film in the trench, and a source electrode and a drain electrode formed respectively over the barrier layer on both sides of the gate electrode. A coupling portion inside the through hole that reaches as far as the potential fixing layer electrically couples the potential fixing layer and the source electrode. This can reduce fluctuation of the characteristics such as a threshold voltage and an on-resistance.