| 摘要 |
<p>The present invention relates to a selective covering method of a defect existing on the surface of a semiconductor substrate comprising: a defective substrate preparing step of preparing a semiconductor substrate wherein a defective semiconductor layer is formed; a cover layer forming step of forming a cover layer with a masking material on the upper side of the semiconductor layer; a defective cover layer producing step of producing a defective cover layer by selectively irradiating an area which is formed on the upper side of the defect in the cover layer with a laser beam and converting a chemical characteristic of a part of the cover layer according to the laser irradiation; and a selective etching step of removing the residual cover layer excluding the defective cover layer by selectively etching the cover layer excluding the defective cover layer. The selective covering method of a defect existing on the surface of a semiconductor substrate produces the semiconductor substrate wherein the defect of the semiconductor substrate is filled with the masking material. According to the present invention as specified above, a high quality semiconductor device can be provided by covering the defect such as a nanopipe, a bundle type threading dislocation, etc. formed on the semiconductor substrate such as silicon carbide, aluminum nitride, gallium nitride, etc.</p> |
