Semiconductor optoelectronic structure with increased light extraction efficiency

摘要

A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

主权项

1. A semiconductor light emitting structure, comprising:
a substrate; a buffer layer formed on the substrate, comprising a pattern having a plurality of grooves as voids, wherein each groove of the plurality of grooves extends downwardly reaching the substrate; a semiconductor layer formed on the buffer layer, comprising:
an n-type conductive layer formed on the buffer layer;an active layer formed on the n-type conductive layer; anda p-type conductive layer formed on the active layer; a transparent electrically conductive layer formed on the semiconductor layer; a p-type electrode formed on the transparent electrically conductive layer; and an n-type electrode formed on the n-type conductive layer; wherein inner surfaces of the buffer layer forming interfaces of the buffer layer with upper main surfaces of the plurality of grooves have a roughness capable of increasing light extraction efficiency of light emitted by the active layer.