发明名称 |
Conductive pads and methods of formation thereof |
摘要 |
In one embodiment, a device includes a first conductive pad disposed over a substrate, and a etch stop layer disposed over a top surface of the first conductive pad. The device further includes a solder barrier disposed over the etch stop layer. |
申请公布号 |
US9082626(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201313952080 |
申请日期 |
2013.07.26 |
申请人 |
Infineon Technologies AG |
发明人 |
Gatterbauer Johann;Weidgans Bernhard |
分类号 |
H01L23/00;H01L23/495 |
主分类号 |
H01L23/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of forming a device, the method comprising:
forming a first conductive pad and a second conductive pad over a substrate; forming a etch stop layer over the first conductive pad and the second conductive pad; forming a solder layer over the etch stop layer, wherein the solder layer is configured to form a solder with another material; removing the solder layer from over the first conductive pad using a first etch process; and removing the etch stop layer from over the first conductive pad using a second etch process, wherein the second etch process selectively removes the etch stop layer relative to the underlying first conductive pad. |
地址 |
Neubiberg DE |