发明名称 Conductive pads and methods of formation thereof
摘要 In one embodiment, a device includes a first conductive pad disposed over a substrate, and a etch stop layer disposed over a top surface of the first conductive pad. The device further includes a solder barrier disposed over the etch stop layer.
申请公布号 US9082626(B2) 申请公布日期 2015.07.14
申请号 US201313952080 申请日期 2013.07.26
申请人 Infineon Technologies AG 发明人 Gatterbauer Johann;Weidgans Bernhard
分类号 H01L23/00;H01L23/495 主分类号 H01L23/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a device, the method comprising: forming a first conductive pad and a second conductive pad over a substrate; forming a etch stop layer over the first conductive pad and the second conductive pad; forming a solder layer over the etch stop layer, wherein the solder layer is configured to form a solder with another material; removing the solder layer from over the first conductive pad using a first etch process; and removing the etch stop layer from over the first conductive pad using a second etch process, wherein the second etch process selectively removes the etch stop layer relative to the underlying first conductive pad.
地址 Neubiberg DE