Non-volatile memory device and manufacturing method thereof

摘要

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side.

主权项

1. A non-volatile memory device comprising:
a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective insulating layer covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; an interlayer insulating layer covering at least a part of the side wall protective insulating layer; and an electrically-conductive layer which is in direct physical contact with the second electrode, wherein: the electrically-conductive layer directly covers an entirety of an uppermost surface of the second electrode and directly covers and is in direct physical contact with at least an uppermost portion of the side wall protective insulating layer and a portion of the side wall protective insulating layer located outward relative to the second electrode, and the side wall protective insulating layer extends across the second electrode to a position above an uppermost end of the second electrode such that an uppermost end of the side wall protective insulating layer is located above the uppermost end of the second electrode, in a cross section cutting the first electrode, the variable resistance layer, the second electrode, the side wall protective insulating layer, the interlayer insulating layer and the electrically-conductive layer.