| 发明名称 |
Stacked semiconductor devices |
| 摘要 |
A stacked semiconductor device includes a first and second semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the first and second semiconductor devices include active circuitry. The first and second semiconductor devices are stacked so that the first major surface of the first semiconductor device faces the first major surface of the second semiconductor device. At least one continuous conductive via extends from the second major surface of the first semiconductor device to the first major surface of the second semiconductor device. Conductive material fills a cavity adjacent to the contact pad and is in contact with one side of the contact pad. Another side of the contact pad of the first semiconductor device faces and is in contact with another side of the contact pad of the second semiconductor device. |
| 申请公布号 |
US9082757(B2) |
申请公布日期 |
2015.07.14 |
| 申请号 |
US201314069186 |
申请日期 |
2013.10.31 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Pelley Perry H.;Hess Kevin J.;McShane Michael B.;Stephens Tab A. |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L21/48 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A stacked semiconductor device comprising:
a first semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the first semiconductor device with active circuitry; a second semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the second semiconductor device with active circuitry, wherein the first and second semiconductor devices are stacked so that the first major surface of the first semiconductor device faces the first major surface of the second semiconductor device; at least one continuous conductive via, wherein each continuous conductive via of the at least one continuous conductive via extends from the second major surface of the first semiconductor device to the first major surface of the second semiconductor device; and a contact pad having an opening aligned with the conductive via, wherein conductive material fills a cavity adjacent to the contact pad and is in contact with one side of the contact pad, another side of the contact pad of the first semiconductor device faces and is in contact with another side of the contact pad of the second semiconductor device. |
| 地址 |
Austin TX US |
