System and method for lithography exposure with correction of overlay shift induced by mask heating

摘要

A method of exposing a wafer substrate includes receiving an integrated circuit (IC) design layout defining a pattern; determining a temperature profile of a mask based on the IC design layout, the pattern being formed on the mask; calculating a pre-corrected overlay shift for the mask based on the calculated temperature profile; and exposing a resist layer coated on a substrate using the mask with overlay compensation based on the pre-corrected overlay shift.

主权项

1. A method of exposing a wafer substrate, the method comprising:
receiving an integrated circuit (IC) design layout defining a pattern; determining a temperature profile of a mask, wherein the pattern is formed on the mask, wherein the temperature profile is a predicted temperature of the mask predicted to occur during processing of the substrate, wherein determining the temperature profile of the mask includes determining a heating profile defined in a formula T =a1- b1*exp(-c1*x), wherein:
T is mask temperature;x is a number of exposed substrates in a lot; anda1, b1 and c1 are coefficients determined by mask data and exposing data; calculating a pre-corrected overlay shift for the mask based on the temperature profile of the mask; and exposing a resist layer coated on a substrate using the mask with overlay compensation based on the pre-corrected overlay shift.