Method of manufacturing forming conductive line pattern in boundary region

摘要

A method of manufacturing a semiconductor device including a first region and a second region contacting the first region along a boundary line, includes forming a pattern having an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line. The forming the pattern includes independently performing, for a photoresist applied on a substrate, first exposure for defining the first line, and second exposure for defining the second line, and developing the photoresist having undergone the individually performing the first exposure and the second exposure.

主权项

1. A method of manufacturing a semiconductor device including a layer having a first region and a second region contacting the first region at a boundary line between the first region and the second region, the layer within the first region including a plurality of first patterns and the layer within the second region including a plurality of second patterns, the method comprising:
forming a pattern including an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line, wherein the first region includes a first area that is an entire area within an outer boundary of a region in which the plurality of first patterns and the first line are to be arranged, and the second region includes a second area that is an entire area within an outer boundary of a region in which the plurality of second patterns and the second line are to be arranged, and wherein the first area and the second area have no area shared by the first area and the second area, the forming the pattern including
individually performing, for a photoresist applied on a substrate, first exposure for defining the first line using a first photomask that includes first portions for forming the plurality of first patterns and a first light-shielding portion having a first edge defining the first line and light-shielding the second area, and second exposure for defining the second line using a second photomask that includes second portions for forming the plurality of second patterns and a second light-shielding portion having a second edge defining the second line and light-shielding the first area, anddeveloping the photoresist that has undergone the individually-performed first exposure and second exposure.