Photoresist having improved extreme-ultraviolet lithography imaging performance

摘要

Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas:
R31C—CR21—CR21—CR21—SO3−R31C—CR21—CR21—SO3−R31C—CR21—SO3−R31C—SO3−;The cation component has one of the following chemical formulas:;
Wherein R1 and R2 each represent a chemical compound.

主权项

1. An extreme ultraviolet (EUV) photoresist, comprising:
a polymer that is free of an aromatic group; and a photo acid generator (PAG) free of aromatic groups, wherein the PAG includes an anion component and a cation component, wherein the anion component has one of the following chemical formulas:
R13C−CR12—CR12—CR12—SO3−R13C—CR12—CR12—SO3−R13C—CR12—SO3−R13C—SO3− and the cation component has a chemical formula: wherein: each R1 independently includes a material selected from the group consisting of: methyl and ethyl; and each R2 independently includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group, and wherein the EUV photoresist including the polymer and the PAG is non-absorptive of out-of-band radiation.