| 发明名称 | R-T-B based permanent magnet | ||
| 摘要 | The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved. | ||
| 申请公布号 | US9082537(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414262156 | 申请日期 | 2014.04.25 |
| 申请人 | TDK CORPORATION | 发明人 | Hashimoto Ryuji;Suzuki Kenichi;Choi Kyung-ku;Nishikawa Kenichi |
| 分类号 | H01F1/057;H01F10/12 | 主分类号 | H01F1/057 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A R-T-B based permanent magnet, comprising a R-T-B based structure in which a R1-T-B based crystal layer and a Y-T-B based crystal layer are stacked, wherein R1 represents at least one rare earth element except Y, and T represents at least one transition metal element comprising Fe or a combination of Fe and Co. | ||
| 地址 | Tokyo JP | ||