| 摘要 |
PROBLEM TO BE SOLVED: To suppress pollution of a mask and an optical system due to contamination occurring in a chamber of an EUV exposure device.SOLUTION: An energy-ray source 41 is provided in the vicinity of a wafer stage 24 installed in a chamber 25 of an EUV exposure device 10A, and discharge gas generated from resist applied on the surface of a wafer 23 is dissolved by energy-ray 42, thereby protecting illumination mirrors 14 to 16 constituting an illumination optical system 13, projection mirrors 31 to 36 constituting a projection system optical system 37, a mask 21, etc. from pollution due to contamination. |
