发明名称 METHOD FOR DETERMINING A CONCENTRATION OF METAL IMPURITIES CONTAMINATING A SILICON PRODUCT
摘要 A method determines a concentration of metal impurities contaminating a silicon product. The method comprises obtaining a test sample of the silicon product with the metal impurities disposed thereon. The test sample is placed within a first vessel. A first acid solution is added to the first vessel containing the test sample. The test sample is submerged into the first acid solution to produce a mixed solution comprising the first acid solution, the metal impurities, and digested silicon. The undigested silicon is separated from the mixed solution. The mixed solution is analyzed to determine the concentration of metal impurities contaminating the silicon product.
申请公布号 CA2935320(A1) 申请公布日期 2015.07.09
申请号 CA20142935320 申请日期 2014.12.31
申请人 HEMLOCK SEMICONDUCTOR CORPORATION 发明人 KRESZOWSKI, DOUGLAS H.;PUEHL, CARL W., III;WORKMAN, DALE FRANKLIN
分类号 C01B33/021 主分类号 C01B33/021
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