| 摘要 |
<p>The present invention relates to a plasma ion implantation apparatus and method of performing ion implantation to a metal wire with a small diameter. The apparatus comprises: a vacuum chamber; a plasma source which is installed in one side of the vacuum chamber to form plasma in the vacuum chamber; a hollow cylindrical mesh electrode which is disposed in the vacuum chamber and has a hollow in which the metal wire is disposed; and a high voltage pulse generating device which applies a minus high voltage pulse to the mesh electrode and the metal wire. The high voltage pulse generating device applies a minus high voltage pulse to the mesh electrode so that the metal wire can be disposed in a plasma sheath formed by the minus high voltage pulse applied to the mesh electrode. The thickness of the plasma sheath formed in an outer circumference of the mesh electrode is the same as the radius of the mesh electrode or is larger than the radius of the mesh electrode. In the method of the invention, the hollow cylindrical mesh electrode is disposed in the vacuum chamber, and the metal wire is disposed in the hollow of the mesh electrode. Plasma is formed in the vacuum chamber, and the minus high voltage pulse is applied to the mesh electrode and the metal wire. According to the invention, the metal wire with a small diameter is disposed in the hollow cylindrical mesh electrode, and it is possible to efficiently perform ion implantation without the occurrence of an arc discharge. In addition, since the structure of the mesh electrode is simple, the metal wire is prevented from being damaged while lowering equipment and manufacturing costs, and it is possible to improve productivity.</p> |
