发明名称 SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS
摘要 The method for forming a monolithically isled solar cell comprises forming a first metal layer having base and emitter metallization on a passivated backside of a semiconductor substrate. An insulating support backplane is attached to a surface of the first metal layer and at least a portion of the semiconductor substrate passivated backside. Trenches are formed through the semiconductor substrate to the insulating support backplane in a trench isolation pattern partitioning the semiconductor substrate into a plurality of monolithically isled semiconductor regions. Vias are formed in the insulating support backplane to portions of the first metal layer base and emitter metallization. A second metal layer having base and emitter metallization is formed on the insulating support backplane. The second metal layer is electrically connected to portions of the first metal layer base and emitter metallization through the vias.
申请公布号 US2015194547(A1) 申请公布日期 2015.07.09
申请号 US201514666303 申请日期 2015.03.23
申请人 Solexel, Inc. 发明人 Moslehi Mehrdad M.
分类号 H01L31/0224;H01L31/028;H01L31/05;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method for forming a monolithically isled solar cell, comprising: forming a first metal layer on a passivated backside of a semiconductor substrate, said first metal layer having base and emitter metallization; attaching an insulating support backplane to a surface of said first metal layer and at least a portion of said semiconductor substrate passivated backside; forming trenches through said semiconductor substrate to said insulating support backplane in a trench isolation pattern, said trench isolation pattern partitioning said semiconductor substrate into a plurality of monolithically isled semiconductor regions; forming vias in said insulating support backplane to portions of said first metal layer base and emitter metallization; and forming a second metal layer having base and emitter metallization on said insulating support backplane, said second metal layer electrically connected to portions of said first metal layer base and emitter metallization through said vias.
地址 Milpitas CA US