| 发明名称 |
Tuning Doping Concentration in III-V Compound Semiconductor through Co-Doping |
| 摘要 |
A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type. |
| 申请公布号 |
US2015194490(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414147349 |
申请日期 |
2014.01.03 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Meng-Ku;Lin Hung-Ta;Tsai Pang-Yen;Chang Huicheng |
| 分类号 |
H01L29/10;H01L29/78;H01L29/66 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type, and wherein the epitaxially growing the first III-V compound semiconductor is performed using precursors comprising:
a first precursor comprising Cp2Mg; anda second precursor comprising a donor impurity; and epitaxially growing a second III-V compound semiconductor overlying and contacting the first III-V compound semiconductor, wherein the second III-V compound semiconductor is of n-type. |
| 地址 |
Hsin-chu TW |
