发明名称 |
SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method for Same |
摘要 |
Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal. |
申请公布号 |
US2015191849(A1) |
申请公布日期 |
2015.07.09 |
申请号 |
US201314405543 |
申请日期 |
2013.04.16 |
申请人 |
SHIRAI Takayuki;DANNO Katsunori |
发明人 |
Shirai Takayuki;Danno Katsunori |
分类号 |
C30B19/06;C30B19/08;C30B19/12;C30B29/36 |
主分类号 |
C30B19/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
US |