发明名称 CURRENT APPLICATION DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
摘要 Provided are a current application device capable of improving the electrical contact between projections of a contact section and a surface electrode when applying a test current to a semiconductor element, and a method of manufacturing a semiconductor element properly tested by using the current application device. The current application device includes a contact section that has a plurality of projections, which are brought into contact with a surface electrode of a semiconductor element to apply a test current, and a pressing section that presses the contact section against the semiconductor element such that the projections penetrate a film to come in contact with the surface electrode. The contact section has a plurality of the projections on a plane that has been formed in a curved shape, and the curved-shaped plane is deformed into a planar shape by being pressed by the pressing section.
申请公布号 US2015194353(A1) 申请公布日期 2015.07.09
申请号 US201514589190 申请日期 2015.01.05
申请人 HONDA MOTOR CO., LTD. 发明人 Akahori Shigeto;Saito Hitoshi;Yamagishi Hiroyuki;Hirayama Shinyu;Hasegawa Satoshi;Yamaji Yoko;Sato Koichiro;Saitou Machie
分类号 H01L21/66;G01R1/073;G01R31/26;H01L21/28;H01L21/67 主分类号 H01L21/66
代理机构 代理人
主权项 1. A current application device that applies a test current to a semiconductor element having at least a part of a surface electrode covered with an electrical insulation film, comprising: a contact section having a plurality of projections that penetrate the film to come in contact with the surface electrode so as to apply the test current to the semiconductor element; and a pressing section that presses the contact section against the semiconductor element so that the projections penetrate the film to come in contact with the surface electrode, wherein the contact section has the plurality of projections on a plane formed in a curved shape, and the plane having the curved shape is deformed into a planar shape when pressed by the pressing section.
地址 Tokyo JP