发明名称 |
METHOD FOR MAKING ORIENTED TANTALUM PENTOXIDE FILMS. |
摘要 |
<p>Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.</p> |
申请公布号 |
EP2286002(B1) |
申请公布日期 |
2015.07.08 |
申请号 |
EP20090758960 |
申请日期 |
2009.05.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BHAT, VISHWANATH;ANTONOV, VASSIL |
分类号 |
C23C16/40;C23C16/448;C30B25/02;C30B29/16;H01L21/316;H01L49/02 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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