| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a field limiting layer (resurf layer) having a plurality of regions formed below recesses and having implantation amounts different from one another, which suppresses increase in the number of processes and prevents occurrence of dishing. <P>SOLUTION: A semiconductor device comprises a P-type resurf layer 10 formed on an outer periphery of a P well 2, which is an outer peripheral region of a semiconductor element. The resurf layer 10 includes: a first resurf region 11 to which a P-type impurity is implanted at a first area density; a second resurf region 12 arranged on the outer side of the first resurf region 11, to which a P-type impurity is implanted at a second area density smaller than the first area density; and a third resurf region 13 arranged on the outer side of the second resurf region 12, to which a P-type impurity is implanted at a third area density smaller than the second area density. The first resurf region 11 and the third resurf region 13 are respectively formed below recesses 11r, 13r formed on a top face of a semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
