| 发明名称 |
CMP method for metal-containing substrates |
| 摘要 |
An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about −5 mV to about −100 mV. The composition can be used to polish the surface of a tungsten containing substrate. |
| 申请公布号 |
US9074118(B2) |
申请公布日期 |
2015.07.07 |
| 申请号 |
US200712309212 |
申请日期 |
2007.07.06 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
Vacassy Robert;Zhou Renjie |
| 分类号 |
H01L21/302;B44C1/22;C23F1/00;C03C15/00;C03C25/68;C09K13/00;C09K3/14;C09G1/02;H01L21/321 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
Omholt Thomas E;Hornilla Arlene |
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
a. at least one oxidizer b. at least one catalyst having multiple oxidation states; and c. an abrasive comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about −5 mV to about −100 mV. |
| 地址 |
Aurora IL US |
